Abstract：The conductance property of Sn O2 /Fe2 O3mutilayer thin films prepared by PVCD is different from the monolayer Sn O2 thin films.The experimental result of the conductance property as a function of the Sn O2 thin film on the thin film of Fe2 O3can be interpreted by the theory of amorphous semiconductors.The semiconducting behaviors of bilayer thin films are related to the concentration of Sn O2 .Atlow Sn O2 concentration, n- type donor is the main semiconducting mechanism of the electrical conductivity.At high Sn O2 concentration,the electrical risitivity is increased owing to reflection of donor and grain interfaces risitivity.
收稿日期: 2001-01-25
引用本文:
张文华. SnO_2/Fe_2O_3复合膜界面电导率特性分析[J]. , 2001, 40(1): 0-0.
张文华. Analysis of conductance property of interfaces transition layer for Sn O_2 /Fe_2 O_3multilayer films. , 2001, 40(1): 0-0.
