Abstract：By Sol-Gel method, such ferroelectric thin films as PZT and PCZT and PCNZT were made on LaNiO3 substrates. The experimental results show that cobalt-doping can check the formation of-pyrochlore phase in the crystallization of PZT thin films. The results also show that the PZT ferroelectric thin films with cobalt-doping are found to possess greater remnant polarization, larger coercive field, more dielectric properties and increased leakage current. A proper cobalt-doping percentage is also found to be 10 mol%. The doping of different percentage of Nb in PCZT thin films with 10 mol% shows that Nb-doping is in a good position to overcome the over-leakage of PCZT thin films. Within a doping range of 1 mol% and 10 mol%, the larger Nb-doping percentage results in the less leakage of PCNZT and the simultaneous result is shown that Nb-doping leads to the reduction of PCZT remnant polarization power and dielectric constant.
收稿日期: 2006-02-25
引用本文:
王国强,王绍明,刘红日. Co和Nb掺杂PZT铁电薄膜的制备及性能研究[J]. , 2006, 45(2): 0-0.
王国强,王绍明,刘红日. The preparation and properties of PZT ferroelectric thin films with cobalt and Nb-doping. , 2006, 45(2): 0-0.
