Two-dimensional V structure aluminum phosphide semiconductor and its tunable direct band gap
MAO Caixia1， ZHANG Yuping1， XUE Li1， YANG Xuxin1， HU Yonghong1， WU Tao2
(1.School of Electronic and Information Engineering， Hubei University of Science and Technology， Xianning， Hubei 437100， China；2.Office of Educational Administration， Xianning Vocational Technical College， Xianning， Hubei 437100， China)
Abstract：A new two-dimensional semiconductor，V structure aluminum phosphide (V-AlP) monolayer，is predicted theoretically and its structural and electronic properties are examined in detail through using first principle calculations. And under strain and electric field， its electronic properties are effectively regulated.The computation results indicate that it has good stability. It possesses a wide directgap (2.6 eV). Under biaxial strain， its bandgap can be tuned from 1 eV to 2.6 eV. And a direct-indirect bandgap transition is found when the external tension is applied. V-AlP monolayer also exhibits anisotropic behavior for its band structure variation trends under strains along different directions are obviously different. When the external E-field change from 5 V·nm－1 to 10 V·nm－1， the bandgap of V-AlP monolayer can be tuned linearly from 0 eV to 2.6 eV.It is concluded that strain and E-field can all be used effectively to modify the electronic property of the V-AlP monolayer. Thus， these results indicate that V-AlP monolayer will have promising applications in nanoelectric devices.
2021, Vol. 55 
