Synthesis and characterization of a versatile semiconductor material： indium phosphide
GAO Qiang1， MAO Caixia2，XUE Li2， WU Tao3， HU Yonghong1
(1.School of Resources and Environmental Science and Engineering， Hubei University of Science and Technology，Xianning 437100，Hubei， China；2.School of Electronic and Information Engineering， Hubei University of Science and Technology， Xianning 437100， Hubei， China；3.School of Engineering， Xianning Vocational Technical College，Xianning 437100， ubei， China)
Abstract：Indium phosphide films were deposited using glass substrates at 773 K by utilizing the chemical spray pyrolysis method. The indium phosphide film exhibited polycrystalline nature with cubic lattice and had a preferred orientation along (111) direction with a direct bandgap of 1.49 eV. The films showed n-type conductivity and the value of resistivity was found to be 5.18×103 Ω·cm. Thus， indium phosphide film has potential applications in high frequency， high power materials and optoelectronic devices in the future.
2023, Vol. 57 
